For those who were unable to attend the Flash Memory Summit, Samsung’s Senior VP of Memory R&D, Bob Brennan, announced in his keynote speech that a 3D 32-layer V-NAND, a chip that would achieve twice the chip density of planar NAND, was entering production and that SSDs would follow in a month. Now, two months later, Samsung has announced those SSDs.
This week’s release reiterates Continue reading
Wiley has recently published a new book by Betty Prince titled Vertical 3D NAND Technologies that is one to consider if you want to bring yourself up to speed on recent research behind today’s and tomorrow’s 3D memory technologies.
For those who haven’t previously encountered Dr. Prince, she is the author of a number of key books covering memory design and holds memory patents written over her 30-year career in the field.
The book provides capsule summaries of over 360 papers and articles from scholarly journals on the subject of 3D memories, including DRAM, NAND flash, and stacked chips.
These papers are organized into Continue reading
Although the course was very well received, I never posted a link to it on The Memory Guy blog. This post is intended to correct that error.
The course runs 75 minutes and covers the basics of DRAM, non-volatile RAM, SRAM, NAND flash, NOR flash, mask ROM, and EEPROM. It explains each technology’s advances in size, cost and performance, leading up to the development of Continue reading
SanDisk has introduced an SD Card with a whopping 512 gigabytes of storage. Noting that SD Card capacities have increased by 1,000 times over the past ten years, from 512MB to 512GB, the company says that this product is aimed at professional HD videographers (who can justify its $800 price) allowing them to shoot Raw-format footage without shutting their cameras off, which could potentially allow them to miss a magic moment.
To The Memory Guy this represents an amazing piece of packaging technology. Let’s see why:
In 2003 SanDisk’s 512MB card contained Continue reading
One of the more fun aspects of last week’s Flash Memory Summit was the presentation of the Lifetime Achievement Award. This is something that the show’s management has allowed me to do for the past four events.
This year’s award went to Dr. Simon Sze, who co-invented the floating gate transistor (the basis for all flash, EEPROM, and EPROM) at Bell Labs back in 1967.
Sze and his partner Dawon Kahng were finishing lunch in the company cafeteria with a cheesecake dessert. The two discussed what would happen if a MOSFET was built with extra layers like the layers in the cake. Their intent was to use semiconductors to replace Continue reading
Long-term clients of mine, even those dating back to my decade at Dataquest in the 1990s, are familiar with the concept that spot prices behave differently during a shortage. When there is too much DRAM spot prices remain below contract prices, because OEMs who bought too much product clear their inventory at quarter end (and other times) by selling at a loss.
During a shortage the opposite is true: OEMS find that they can’t get as much DRAM as they wanted through their contract sources, so they shop for the balance on the spot market. Since there are more buyers than sellers, spot prices invariably raise higher than contract prices.
When the prices change from one state of affairs to the other then it is safe to assume that Continue reading
Intel and Micron today announced that the new version of Intel’s Xeon Phi, a highly parallel coprocessor for research applications, will be built using a custom version of Micron’s Hybrid Memory Cube, or HMC.
This is only the second announced application for this new memory product – the first was a Fujitsu supercomputer back in November.
For those who, like me, were unfamiliar with the Xeon Phi, it’s a module that uses high core-count processors for problems that can be solved with high degrees of parallelism. My friend and processor guru Nathan Brookwood tells me Continue reading
Samsung has announced that the company’s newest memory fabrication plant (Fab) in Xi’an, China has “begun full-scale production operations”, adding that: “The new facility will manufacture Samsung’s advanced NAND flash memory chips: 3D V-NAND.”
I immediately asked whether the plant will build products other than 3D NAND, and the company has replied that this will be the only product produced in the Xi’an plant. What Samsung has not said is what is meant by “full-scale production operations.” Typically wafer fabs start with a very low production capacity as new tools are being qualified, only ramping to high-volume production a year or more after initial production.
Samsung points out that production has begun a mere 20 months after initial groundbreaking, which is quite Continue reading
Only months after Samsung’s announcement of 3D memory production a new 4-dimensional memory has been prototyped by university researchers. This memory not only has bits in the X and Y dimensions, like planar NAND, and the Z dimension, like 3D NAND, but it also grows in capacity over time, spanning the fourth dimension: time.
This research has been spearheaded by George P. Burdell, Assistant Associate Professor pro tem at Death Valley University. The work is the culmination of a decades-long effort to find a way to increase memory sizes in systems without the need to replace chips or modules.
The team has created the name “Growing RAM” or “GRAM” for the technology. Current prototypes exhibit very favorable Continue reading