At a technical conference hosted by the IEEE this week IBM announced the results of nearly a decade of research in which its scientists have been investigating the emerging technology known as “Phase Change Memory” (PCM). The scientists presented a means of successfully storing three bits per cell for the first time, while also addressing all of PCM’s challenging idiosyncrasies, including resistance drift and temperature drift.
Commonly referred to by the erroneous nickname “TLC” for Triple Level Cell, this technology squeezes three bits of data into the space of a single bit, essentially cutting the cost per gigabyte to about one third of that of a standard memory chip making it closer in cost to flash.
With this step IBM expects to help drive a new memory layer into existence, one that will fit between the cheap and slow NAND flash used in SSDs and the fast but expensive DRAM used for main memory. Such a layer would improve the cost/performance of all types of Continue reading
For almost two years there has been a lot of worry about DRAM spot prices. This post’s graphic plots the lowest weekly spot price per gigabyte for the cheapest DRAM, regardless of density, on a semi-logarithmic scale. (Remember that on a semi-logarithmic scale constant growth appears as a straight line.)
The downward-sloping red line on right side of the chart shows that DRAM prices have been sliding at a 45% annual rate since October 2014. This has a lot of people worried for the health of the industry.
What most fail to remember, though, is that DRAM spot prices hit their lowest point twice in 2011, at $2.40 in August, and then $2.20 in November. Today’s lowest DRAM spot prices have only recently dipped below the $2.52 point hit in October of 2014.
The black dotted line in the chart is intended to focus readers’ attention on DRAM costs, which decrease at a 30% average Continue reading