MRAM STT MagRAM

Fundamentals of Memory – Free Online Course

Fundamentals of Memory Course - EE TimesSome time ago The Memory Guy was asked by Numonyx (later acquired by Micron) to put together an online course for EE Times on memory technologies, explaining how each one works and where it is used.

Although the course was very well received, I never posted a link to it on The Memory Guy blog.  This post is intended to correct that error.

The course runs 75 minutes and covers the basics of DRAM, non-volatile RAM, SRAM, NAND flash, NOR flash, mask ROM, and EEPROM.  It explains each technology’s advances in size, cost and performance, leading up to the development of Continue reading

Macronix Solves Flash Wear Problem

Macronix Headquarters, Hsinchu TaiwanThe December issue of the IEEE Spectrum includes a fascinating article about a 100 million cycle flash memory developed by Macronix.  The company will present this design at at IEDM this month.

In brief: Macronix’ researchers buried a heater in the array to heat the tunnel dielectric, annealing out the disruptions & traps that might cause a bit to fail.

A prototype has so far been tested more than 100 million cycles and it shows no sign of impending failure.  Researchers believe that it is likely to reach one billion or more cycles, but such testing will take several months.  This just may be able to Continue reading

Everspin Samples First STT MRAM

Everspin today announced that select customers have been sampled the world’s first “ST-RAM” a 64Mb chip using STT MRAM technology, rather than Everspin’s existing production toggle MRAM technology.

For the past decade or so memory researchers have been looking to Spin Transfer Torque (sometimes called “Spin Torque Transfer”) MRAMs as a way of getting to tighter processes than conventional toggle MRAM.  It seems that current densities in toggle MRAM rise too high as the process shrinks – at some point the process could no longer scale since chips would burn themselves out during programming.  The ST-RAM paves Everspin’s path toward Continue reading

Alternative Memory Technologies Patiently Wait For Market to Explode

Cross Section of a PCM Bit CellLane Mason of Objective Analysis recently shared with The Memory Guy an article he wrote for the 4 April 2007 Denali Memory Report covering Phase Change Memory (PCM or PRAM.)  It looked like something big was about to happen with the technology: PCM looked nearly ready to enter production.

The article included an excerpt of an EE Times interview with Micron’s CEO, the late Steve Appleton, in which Appleton stated that PCM advocates threatened to take over the memory market in 2000.

Here it is 2012, and PCM represents little more than a drop in the bucket when it comes to memory sales, although Continue reading

The End of Flash Scaling

The End is at Hand for NAND Flash ScalingEveryone knows that flash memory is about to hit its scaling limit – it’s right around the corner.  We’re ready for it because it’s been right around the corner for more than a decade now.  It’s so close we can taste it.

When will it happen?

One thing that is quite clear is that nobody knows when NAND flash will stop scaling.  Everyone knows that it’s soon, but researchers continue to find ways to push the technology another couple of process nodes past where anyone thought it could possibly go, and they have been doing this since Continue reading

Contact

Jim Handy Objective Analysis Memory Market Research +1 (408) 356-2549 Jim.Handy (at) Objective-Analysis.com

Translate to:

Website Translation GTS Translation