ASML

Why NAND is So Difficult to Scale

ASML chart chowing the lithography used for 4X, 3X, 2X, and 1Xnm planar NAND and 3D NANDNAND flash is the process leader in memory technology, and this puts it in a very challenging position: It must ramp to high volume production using techniques that have never been tried before.

The graphic for this post (click to enlarge), supplied by ASML, the semiconductor industry’s leading lithography tool supplier, illustrates the challenge of migrating from one process node to the next.  Across the bottom, on the X-axis, are representative process nodes ranging from “2D-45”, or two-dimensional (planar) 45nm NAND, to “3D-5x”, or three-dimensional 5xnm NAND.  Below these numbers are the year of volume production.

The vertical axis, labeled “Tolerance” represents the minimum Continue reading

3D NAND’s Impact on the Equipment Market

Costs to Migrate to Next Lithography Node - Applied Materials (click to enlarge)A very unusual side effect of the move to 3D NAND will be the impact on the equipment market.  3D NAND takes the pressure off of lithographic steps and focuses more attention on deposition and etch.  The reason for going to 3D is that it provides a path to higher density memories without requiring lithographic shrinks.

This sounds like bad news for stepper makers like ASML, Canon, and Nikon while it should be a boon to deposition and etch equipment makers like Applied Materials, Tokyo Electron, and Lam Research.

In its summer 2013 V-NAND announcement, Samsung explained that it would be Continue reading

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Jim Handy Objective Analysis Memory Market Research +1 (408) 356-2549 Jim.Handy (at) Objective-Analysis.com

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