This series has looked at 3D NAND technology in a good deal of technical depth. The last question to be answered centers around the players and the timing of the technology. A lot has been said about the technology and its necessity. Will everyone be making 3D NAND? When will this big transition occur?
This post will provide an update as of its publication (13 December 2013) to show each company’s current status, to the best of The Memory Guy’s understanding. Readers may want to refer back to the earlier posts in this series, as well as to a June 2013 Nikkei TechON article that gives a good review of the 3D NAND alternatives that have been presented at various technical conferences.
Let’s start with Samsung, the largest producer of NAND flash today. Just prior to Memcon 2013 last Continue reading
At the Flash Memory Summit yesterday ES Jung, PhD, EVP & GM for the Samsung R&D Center, explained the inner workings of Samsung’s new V-NAND vertical NAND flash technology. I will shortly be writing a series to explain what a 3D NAND is since there is little on the web that gives clear details about the technology.
One key attribute of most 3D NAND approaches is the use of a charge trapping layer. This has to do with the difficulty of manufacturing sideways floating gates.
Dr Jung delighted the show’s audience by explaining that a standard floating gate is like Continue reading