SanDisk co-founder Eli Harari was awarded the National Medal of Technology and Innovation on November 20 by President Obama. The medal, which was bestowed upon Dr. Harari in a White House ceremony, is the United States’ highest honor for scientific and technological achievement, and recognizes those whose lasting contributions have created a greater understanding of the world and improved the lives of many.
Harari co-founded SanDisk more that 25 years ago with the vision that flash memory would be used to store data in mobile products, a vision that initially took seed in photography in the 1990s, and has since become the fastest-growing Continue reading
An article in a recent issue of Business Korea posits that Apple may be having trouble stemming from the company’s adoption of TLC flash in it’s new iPhone 6.
The article states:
considering that technical defects mainly occur in the 128GB version of the iPhone 6 Plus, there might be a problem in the controller IC of triple-level cell (TLC) NAND flash.
The problem has led to numerous warranty replacements and the looming prospects of a recall.
(Note that Continue reading
Although the course was very well received, I never posted a link to it on The Memory Guy blog. This post is intended to correct that error.
The course runs 75 minutes and covers the basics of DRAM, non-volatile RAM, SRAM, NAND flash, NOR flash, mask ROM, and EEPROM. It explains each technology’s advances in size, cost and performance, leading up to the development of Continue reading
Long-term clients of mine, even those dating back to my decade at Dataquest in the 1990s, are familiar with the concept that spot prices behave differently during a shortage. When there is too much DRAM spot prices remain below contract prices, because OEMs who bought too much product clear their inventory at quarter end (and other times) by selling at a loss.
During a shortage the opposite is true: OEMS find that they can’t get as much DRAM as they wanted through their contract sources, so they shop for the balance on the spot market. Since there are more buyers than sellers, spot prices invariably raise higher than contract prices.
When the prices change from one state of affairs to the other then it is safe to assume that Continue reading
The answer is: “There is no such thing: It’s a misstatement.”
The term “MLC” has, by a number of people, been mistranslated to “multi-layer cell.” The misunderstanding appears to have originated in the financial community. People in the flash memory business never use the term at all.
Yes, we talk about MLC, but to us the term means “multilevel cell”.
A multilevel cell is a cell that uses varying voltage levels to represent different states. With four voltage levels the resulting four states on a single cell can be turned into Continue reading
During SK hynix’ October 29 earnings call the company further clarified the status of its Wuxi fab line that was hit by a fire on September 4. In brief, the company may miss its expected end-November date to recover to full operation.
Interestingly, although DRAM bit shipments declined by 2% because of the fire, revenues increased by 3% thanks to price increases caused by the resulting tight DRAM supply. This gave the company a revenue boost taking total semiconductor revenues from ₩3.93 trillion ($3.54B US) in the second quarter to ₩4.08 trillion ($3.66B US) in the third quarter. Not only was this revenue a record number for SK hynix, but margins also reached a record high.
All in all, it was a very good quarter, despite the fire, and perhaps because of it.
The company disclosed that restoration of the air ventilation system and the clean room have been Continue reading
Micron has announced that it is sampling a new 128Gb NAND flash chip based upon a 16nm process, with production slated for the fourth quarter. To The Memory Guy’s knowledge this is the tightest process available.
The company, with its partner Intel, gained a lead with its 20nm process generation through its use of a Hi-k tunnel dielectric, a new material that replaces more conventional silicon dioxide layer with a new material (Micron won’t say what) that yields the same capacitance with a thinner layer. This has become very important with today’s tight processes because of issues of inter-cell interference.
Other NAND makers are migrating to Continue reading
In brief: Macronix’ researchers buried a heater in the array to heat the tunnel dielectric, annealing out the disruptions & traps that might cause a bit to fail.
A prototype has so far been tested more than 100 million cycles and it shows no sign of impending failure. Researchers believe that it is likely to reach one billion or more cycles, but such testing will take several months. This just may be able to Continue reading
As this post’s graphic illustrates the company has has seen downward-trending memory revenues for five of the past six quarters, but Q2 revenues increased by ten percent. Interestingly enough, the last quarter-to-quarter increase was a miniscule 0.3% one in Q2 of 2011. It looks as if growth tends to regularly occur in Samsung’s second quarter.
Last quarter’s revenue growth helps to debunk rumors that Samsung was Continue reading