Rambus and Micron announced on Tuesday that they have signed a patent cross license agreement. Micron receives rights to Rambus IC patents, including memories. Both Micron and Elpida products will be covered. The companies have thus settled all outstanding patent and antitrust claims in their 13-year court battle.
Micron will make royalty payments to Rambus of up to $10 million per quarter over the next seven years, totaling $280 million, after which Micron will receive a perpetual, paid-up license.
Rambus and Micron both have Continue reading
Let’s look at how one form of 3D NAND is manufactured. For this post we will explore the original design suggested by Toshiba at the IEEE’s International Electron Device Meeting (IEDM) in 2007. It’s shown in the first graphic of this post. (Click on any of the graphics for a better view.)
Toshiba calls this technology “BiCS” for “Bit Cost Scaling.” The technique doesn’t scale the process the way the world of semiconductors has always done to date – it scales the cost without shrinking the length and width of the memory cell. It accomplishes this by going vertically, as is shown in this post’s first graphic.
This takes a special effort. This is where the real Continue reading
- At its peak in the late 1980s the DRAM market sported 23 suppliers.
- Today there are 6 suppliers of any note: Samsung, Hynix, Micron, Elpida, Nanya, and Powerchip
- The already-depressed market is only going to worsen in 2012. Capital spending in 2010 is seeing to that. Although many believe that prices cannot get any lower, that is exactly what they will do in 2012. Continue reading
What is a Content-Addressable Memory (CAM)? The Memory Guy decided to post this after having recently run across a very strange web post HERE that erroneously inferred that CAM chips from NEC could be a threat to NAND-based SSDs. The article was based on a press release from NEC and Tohoku University that can be read HERE.
It’s not at all surprising that the release was misunderstood – it’s very awkwardly written:
The new CAM utilizes the vertical magnetization of vertical domain wall elements in reaction to magnetic substances in order to enable data that is processing within the CAM to be stored on a circuit without using power.