A 1T SRAM? Sounds Too Good to be True!

Zeno 1T SRAMAt the IEEE’s International Electron Device Meeting (IEDM) in December a start-up named Zeno Semiconductors introduced a 1-transistor (1T) SRAM.  Given that today’s SRAMs generally use between six and eight transistors per bit, this alternative promises to squeeze the same amount of SRAM into a space 1/6th to 1/8th the size of current SRAM designs, leading to significant cost savings.

The device is really a single standard NMOS transistor that behaves as if it were two bipolar transistors connected into something like a flip-flop, although the transistors’ bases are open, rather than cross-coupled to the opposite transistors’ collector, as is done in a standard flip-flop.

The cell is selected by activating the gate, and the bit is set or sensed via the source and drain to provide a differential signal.

This is a decidedly clever departure from standard SRAM configurations, and it reflects a careful observation of the actual Continue reading


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