Month: May 2013

SanDisk & Toshiba Move to Next Process Node

SanDisk's explanation of old vs new 19nm processesSanDisk and Toshiba, in separate announcements, both today disclosed their next-generation process technology.

The companies introduced their new “1y” processing node that, according to SanDisk, produces 19nm x 19.5nm cell, versus the earlier “19nm” process (or “1x”) that used a 19nm x 26nm cell.

The graphic for this post (click to enlarge) was presented during SanDisk’s May 5th Analyst Day and compares the 24nm process to the 19 x 26nm process, moving to the 19 x 19nm process, and eventually to “1z” which neither company is yet revealing.  After the 1z process SanDisk believes Continue reading “SanDisk & Toshiba Move to Next Process Node”

A Retrospect of Toshiba’s NAND Production Cut

Did Toshiba's 3Q12 Capacity Reduction Really Happen?There are some who still believe that Toshiba made good on its announcement to cut NAND flash production by 30%.  Let’s take a close look to see if that really happened.

Readers may recall that Toshiba stated last July that it would immediately cut NAND flash production by 30%.  At the time NAND was selling below cost for spot prices as low as 31 cents/GB.

The Memory Guy questioned both the wisdom of the move and its authenticity in a blog post at that time, since this level of cut would reduce Toshiba’s market share while increasing its Continue reading “A Retrospect of Toshiba’s NAND Production Cut”