SanDisk and Toshiba, in separate announcements, both today disclosed their next-generation process technology.
The companies introduced their new “1y” processing node that, according to SanDisk, produces 19nm x 19.5nm cell, versus the earlier “19nm” process (or “1x”) that used a 19nm x 26nm cell.
The graphic for this post (click to enlarge) was presented during SanDisk’s May 5th Analyst Day and compares the 24nm process to the 19 x 26nm process, moving to the 19 x 19nm process, and eventually to “1z” which neither company is yet revealing. After the 1z process SanDisk believes Continue reading “SanDisk & Toshiba Move to Next Process Node”
There are some who still believe that Toshiba made good on its announcement to cut NAND flash production by 30%. Let’s take a close look to see if that really happened.
Readers may recall that Toshiba stated last July that it would immediately cut NAND flash production by 30%. At the time NAND was selling below cost for spot prices as low as 31 cents/GB.
The Memory Guy questioned both the wisdom of the move and its authenticity in a blog post at that time, since this level of cut would reduce Toshiba’s market share while increasing its Continue reading “A Retrospect of Toshiba’s NAND Production Cut”