Ron Neale To Share Posts

Ron NealeThe Memory Guy is pleased to begin publishing posts from Ron Neale.  Ron is a specialist in phase-change memory (PCM or PRAM) who has been contributing a lot of analysis of this technology in EE Times.

Ron’s career has centered around phase-change memory.  He was the lead author for the groundbreaking 1970 PCM article in Electronics Magazine, co-authored by Intel’s Gordon Moore (of Moore’s Law fame) introducing the world’s first PCM, a 256-bit device.

Now that the Intel/Micron 3D XPoint Memory has been revealed to use the same technology as Numonyx’ NOR-compatible PCMs, Ron’s analysis of this technology is especially poignant.

Look for posts that feature his keen insight on the technology, its particular challenges, and the ways that PCM is applied to practical problems in advance computing.

Latest White Paper: New Memories for Efficient Computing

A Potpourri of Emerging MemoriesThere has been a lot of discussion in the trade press lately about new memory technologies.  This is with good reason: Existing memory technologies are approaching a limit after which bits can’t be shrunk any smaller, and that limit would put an end to Moore’s Law.

But there are even more compelling reasons for certain applications to convert from today’s leading technologies (like NAND flash, DRAM, NOR flash, SRAM, and EEPROM) to one of these new technologies, and that is the fact that the newer technologies all provide considerable energy savings in computing environments.

Objective Analysis has just published a white paper that can be downloaded for free which addresses a number of these technologies.  The white paper explains why energy is wasted with today’s technologies and how these new memory types can dramatically reduce energy consumption.

It also provides a Continue reading “Latest White Paper: New Memories for Efficient Computing”