The Memory Guy recently encountered some stories in the press about “UltraRAM” which is the name for a new type of NVRAM developed by researchers at Lancaster University in the UK. These researchers published one paper last June in Nature: Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells, and another just this month in the IEEE’s Transactions on Electron Devices: Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory.
According to the papers, the new Continue reading “University of Lancaster Invents Yet Another Memory”
Ron Neale returns to The Memory Guy blog to discuss a “Universal Law” about memory elements and selectors that was presented by CEA Leti at the IEEE’s 2019 IEDM conference last December.
At IEDM 2019 D. Alfaro Robayo et al presented a paper titled: Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration that had a rather interesting claim of a “Universal Law”. It is possible that some links to the past might help to provide an explanation for Continue reading “Observations on the “Universal Law” for NV Memory Cells”
At CES last week Micron Technology introduced a new DRAM. The company’s second 1Znm production part, this 16Gb chip is an early supporter of the new DDR5 interface, opening the door to higher speeds and lower power consumption.
The company’s first 1Znm DRAM is the LPDDR4 part pictured on the left, which started Continue reading “Micron Debuts 16Gb 1Znm DDR5 DRAM Chip”
Kioxia (formerly Toshiba Memory) has announced another setback to its production: there was a fire on January 7 in the Fab 6 facility of its main Yokkaichi campus.
According to a customer letter that was published by TechNews the fire was limited to a single tool and was rapidly extinguished. Although the news story is in Chinese, a picture of the letter is included, and that letter is in English.
Kioxia seems to be Continue reading “Kioxia Fire. Not Again!”