The Invention of Charge Trap Memory – John Szedon

Cartoon of a 4-layer 3D NAND with word balloons speling out the different partsA significant transition has occurred over the past few years that many people don’t know about: Flash memory has moved almost wholesale from the floating gate bit cells, the process that they had always used before, to charge trap bit cells.

Until 2002 all flash used a floating gate.  That year partners AMD & Fujitsu, who later merged Continue reading “The Invention of Charge Trap Memory – John Szedon”

SK hynix Acquires Intel’s NAND Business

Art Nouveau silhouette of dancing coupleSK hynix and Intel today announced that SK hynix will acquire Intel’s NAND flash business for $9 billion.  SK hynix gets Intel’s business, its manufacturing plant with two fabs in Dalian, China, and all of Intel’s designs and intellectual property.  The Memory Guy thinks this is a pretty good deal all around.

Intel doesn’t do well in Continue reading “SK hynix Acquires Intel’s NAND Business”

CeRAM Moves Front and Center on the NV Memory Stage

Photo of Ron Neale, Renowned Phase-Change Memory ExpertIn this post contributor Ron Neale shares a close look at the new memory announced today by Arm spin-off Cerfe Labs.  He provides insight into the operation and composition of this technology which originated at Symetrix, a company that has previously developed FRAM technologies licensed to major semiconductor and capacitor manufacturers.

 


While many companies seek to offer a nonvolatile (NV) alternative to Flash, with varying degrees of success, something new called a correlated electron memory (CeRAM) has entered Continue reading “CeRAM Moves Front and Center on the NV Memory Stage”