Contributor Ron Neale joins us again to review a recently-published article in the journal Nature Scientific Reports. While the main focus of the paper is on using a nitrogen environment to generate stable memory selectors from ZnTe, it also provides some new inputs through which he finds further support of his theories of Forming and device behavior.
A recently-published Nature Scientific Reports article by a research team from Hanyang and Kunsan Universities in The Republic of Korea focuses on Continue reading “ZnTe Selectors to Solve NVM Fabrication Problems”
