Ron Neale enjoyed an extensive e-mail correspondence with Professor Carlos Paz de Araujo of the University of Colorado in Colorado Springs, and founder of Symetrix, about Symetrix’ new approach to ferroelectric memory technology. In this post Ron provides an overview of that conversation that provides significant insight into why FRAMs hit their limit at 180nm, and why they suddenly have opportunities at the most advanced process lithographies.
Ferroelectric memory was one of the earliest and first of the non-volatile (NV) emerging memory technologies to make significant Continue reading “Symetrix: The Next Big Step for FeFETs”