Weebit-Nano’s First Small Steps on the NV Memory Road

Photo of Ron Neale, Renowned Phase-Change Memory ExpertIn this post contributor Ron Neale analyzes Weebit Nano’s recently-announced memory array, based on SiO and an Ovonic Threshold Switch selector developed by CEA-Leti in France.   Ron employs his extensive background in Ovonic devices to try and sleuth out the characteristics of both the memory element and the selector, and to understand some of the inner workings of the cell.


Weebit-Nano (Hod Hasharon, Israel), have recently reported some first steps on the path they have outlined to meet their bold claim of Continue reading “Weebit-Nano’s First Small Steps on the NV Memory Road”

New Report: Emerging Memories Take Off

Fighter Jets Doing Acrobatic Take-OffThe Memory Guy is pleased to announced the release of a new report by Objective Analysis and Coughlin Associates: Emerging Memories Take Off.

The report is the 2021 update of our popular 2020 emerging memories report, and includes detailed technology profiles of MRAM, ReRAM, FRAM, PCM/XPoint and other technologies, profiles of Continue reading “New Report: Emerging Memories Take Off”

Putting the Brakes on Added Memory Layers

Close-up of a part of the blog post's main graphicFor some time two sides of the computing community have been at odds.  One side aims to add layers to the memory/storage hierarchy while other side is trying to halt this growth.

This has been embodied by recent attempts to stop using objective nomenclature for cache layers (L1, L2, L3) and moving to more subjective names that aim to limit any attempt to add another new layer.

This is a matter close to my heart, since Continue reading “Putting the Brakes on Added Memory Layers”

ZnTe Selectors to Solve NVM Fabrication Problems

Photo of Ron Neale, Renowned Phase-Change Memory ExpertContributor Ron Neale joins us again to review a recently-published article in the journal Nature Scientific Reports.   While the main focus of the paper is on using a nitrogen environment to generate stable memory selectors from ZnTe, it also provides some new inputs through which he finds further support of his theories of Forming and device behavior.


A recently-published Nature Scientific Reports article by a research team from Hanyang and Kunsan Universities in The Republic of Korea focuses on Continue reading “ZnTe Selectors to Solve NVM Fabrication Problems”

Why 3D NAND is Stuck at 40nm

Top-Down look at a 3D NAND column with its concentric rings of materialsI recently was asked how much 3D NAND pitches had shrunk since the technology’s 2013 introduction.  Samsung made a big to-do about using 40nm back in 2015, but the company and its competitors don’t seem to have given an update since then.  Shouldn’t it have gone to smaller processes like 35nm, 25nm, 20nm, etc.?

The Memory Guy’s reply was that it’s nearly impossible Continue reading “Why 3D NAND is Stuck at 40nm”

The Invention of Charge Trap Memory – John Szedon

Cartoon of a 4-layer 3D NAND with word balloons speling out the different partsA significant transition has occurred over the past few years that many people don’t know about: Flash memory has moved almost wholesale from the floating gate bit cells, the process that they had always used before, to charge trap bit cells.

Until 2002 all flash used a floating gate.  That year partners AMD & Fujitsu, who later merged Continue reading “The Invention of Charge Trap Memory – John Szedon”

IBM Put PCM at the Core of Hyperdimensional Computing (HDC)

Photo of Ron Neale, Renowned Phase-Change Memory ExpertOur PCM maven Ron Neale explored how PCM is being used to benefit Artificial Intelligence (AI) and Machine Learning (ML) applications.  Although AI is a new spin to The Memory Guy blog, there is a striking similarity between memory chips and certain AI applications, most particularly Neural Networks.

In this post Ron delves into a recent piece of IBM research published in Nature Electronics, that uses Hyperdimensional Computing algorithms to Continue reading “IBM Put PCM at the Core of Hyperdimensional Computing (HDC)”

Applied Materials Video Dramatizes 3D NAND Manufacture

Visualization of a column of ions etching a holeIn a little 3-minute video released this  week for the SEMICON West conference, Applied Materials dramatizes the 3D NAND manufacturing process by using hailstorms for atomic level deposition (ALD) and lightning bolts for etch, all while explaining that the wafer’s surface reaches temperatures hotter than the surface of the sun.

For those who already understand 3D NAND manufacture it’s an interesting Continue reading “Applied Materials Video Dramatizes 3D NAND Manufacture”

SPIE Advanced Litho Conference: Artificial Intelligence and a Lot of Chemistry

I attended a bit of the SPIE Advanced Lithography conference in San Jose this  week.  This  show is different from my normal fare, since The Memory Guy isn’t all that smart with process technology.  Still, there were certain aspects that I wanted to see.  Surprisingly, none of the presentations that I attended related directly to lithography: Two were about Continue reading “SPIE Advanced Litho Conference: Artificial Intelligence and a Lot of Chemistry”

NV Stacked Memory Selectors: Forming the Known Unknowns (Part 2)

Ron NealeIn this second part of a five-part series contributor Ron Neale continues his analysis of selector technologies focusing the nature of the mystery of Forming and a number of the many unanswered questions.


Thin film selectors, or memory matrix isolation devices, based on chalcogenide glasses, would appear to be the devices of choice as non-volatile memory arrays move towards 3D stacked structures. Considerable progress has been made in finding selector compositions which can be doped to provide a suitable level of structural stability required for the NV memory array application.  These were discussed in the first part of this series.

However, there is one known unknown in relation to this type of selector and it is the need for Forming, with the unknown being the physical nature of the changes which occur within the device as a result of the Forming process and any implications those changes might have on reliability and performance. The outward manifestation of Forming is a change in threshold voltage from an initial value to some lower more constant operating value. Not just a minor threshold voltage change but a significant one, a reduction of the order 36% in some cases.

The diagram below illustrates Continue reading “NV Stacked Memory Selectors: Forming the Known Unknowns (Part 2)”