On April 2nd SNIA hosted a CXL webinar to discuss where the technology currently is, and where it is headed. The Memory Guy was honored to play a part in this event.
Other speakers were Arthur Sainio, on behalf of SNIA, Mahesh Natu, on behalf of the CXL Consortium, and Torry Steed of SMART Modular, a company that has been one of the earliest providers of Continue reading “SNIA CXL Webinar Available On-Demand”
High-end xPUs (GPUs, TPUs, and other AI processors) use HBM memories to get the absolute highest memory bandwidth for training the Large Language Models (LLMs) used in today’s generative AI systems. These processors, used in the thousands by hyperscale datacenters, can consume a kilowatt each. As a result, they must dissipate a phenomenal quantity of heat. This has become a very challenging problem for these datacenters. (The Memory Guy should mention here that Objective Analysis plans soon to release a report on HBM.)
The problem has attracted the attention of Continue reading “AI xPUs to be Cooled by HBM”
(The following is an update of a post that originally ran on 13 December 2013. It was republished in 2024 as a part of a series on The Memory Guy blog to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)
This series, originally run in 2013, has looked at 3D NAND technology in a good deal of technical depth. At that time, the last question to be answered centered around the players and the timing that the technology would Continue reading “3D NAND: Who Will Make It and When?”
(The following is an update of a post that originally ran on 6 December 2013. It was republished in 2024 as a part of a series on The Memory Guy blog to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)
A very unusual side effect of the move to 3D NAND was Continue reading “3D NAND’s Impact on the Equipment Market”
(The following is an update of a post that originally ran on 29 November 2013. It was republished in 2024 as a part of a series to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)
Some of my readers have asked: “How is 3D NAND Continue reading “How Do You Erase and Program 3D NAND?”
(The following is an update of a post that originally ran on 22 November 2013. It was republished in 2024 as a part of a series to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)
A prior post in this series (3D NAND: Making a Vertical String) discussed the difficulties of Continue reading “3D NAND: Benefits of Charge Traps over Floating Gates”
All of a sudden HBM is the leading topic of conversation. Why is that? A good number of people ask the Memory Guy that question.
Sure, the recent explosion of generative AI has been the key part of that interest, but there was even more that encouraged competition into this market at an accelerated pace. The simple answer is that HBM, a DRAM used in AI applications, remained Continue reading “Why is Everyone Jumping Into the HBM Market?”
(The following is an update of a post that originally ran on 8 November 2013. It was republished in 2024 as a part of a series to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)
One of the thornier problems Continue reading “3D NAND: How do You Access the Control Gates?”
Samsung has just announced a QLC version of the 3D NAND that the company has calls its 9th-generation V-NAND. This follows the April announcement that its TLC version of the 280-layer 9th-generation device was in volume production.
Naming the product a “Memory Solution for AI Era”, Samsung tells us that Continue reading “Samsung’s New 280-Layer QLC NAND”
(The following is an update of a post that originally ran on 8 November 2013. It was republished in 2024 as a part of a series to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)
My prior 3D NAND post explained how Toshiba’s BiCS cell works, using a silicon nitride charge trap to substitute for a floating gate. This post will look at an alternative Continue reading “An Alternative Kind of Vertical 3D NAND String”
