ZnTe Selectors to Solve NVM Fabrication Problems

Photo of Ron Neale, Renowned Phase-Change Memory ExpertContributor Ron Neale joins us again to review a recently-published article in the journal Nature Scientific Reports.   While the main focus of the paper is on using a nitrogen environment to generate stable memory selectors from ZnTe, it also provides some new inputs through which he finds further support of his theories of Forming and device behavior.


A recently-published Nature Scientific Reports article by a research team from Hanyang and Kunsan Universities in The Republic of Korea focuses on Continue reading “ZnTe Selectors to Solve NVM Fabrication Problems”

IBM Put PCM at the Core of Hyperdimensional Computing (HDC)

Photo of Ron Neale, Renowned Phase-Change Memory ExpertOur PCM maven Ron Neale explored how PCM is being used to benefit Artificial Intelligence (AI) and Machine Learning (ML) applications.  Although AI is a new spin to The Memory Guy blog, there is a striking similarity between memory chips and certain AI applications, most particularly Neural Networks.

In this post Ron delves into a recent piece of IBM research published in Nature Electronics, that uses Hyperdimensional Computing algorithms to Continue reading “IBM Put PCM at the Core of Hyperdimensional Computing (HDC)”

Did 3D XPoint Costs Reach Break-Even?

Dollar sign superimposed over a 3D XPoint Optane DIMMDuring Intel’s latest earnings announcement the company provided information to indicate that 3D XPoint, which Intel sells under the name “Optane”, may have finally reached break-even: It may no longer be selling at a loss.

How would The Memory Guy know?  Well, in fact, I don’t, but I can make an informed guess.

The chart below shows Continue reading “Did 3D XPoint Costs Reach Break-Even?”

Emerging Memory Market to Hit $36 Billion by 2030

A compass dial overlaid on tp of a silicon wafer full of memory chipsThe Memory Guy is pleased to announce the release of a new report co-authored by Objective Analysis and Coughlin Associates named: Emerging Memories Find Their Direction.  In this report we show that emerging memories, MRAM, ReRAM, 3D XPoint, and other technologies are well on their way to reach $36 billion of combined revenues by 2030.

The report provides invaluable guidance to Continue reading “Emerging Memory Market to Hit $36 Billion by 2030”

New Report: Emerging Memories Find Their Direction

A compass dial overlaid on tp of a silicon wafer full of memory chipsThis year emerging memories are getting a taste of the healthy market that lies ahead.  Stand-alone MRAM is being accepted in a broader range of applications, 3D XPoint memory is finally shipping in DIMMs, and embedded MRAM has moved from prototypes into mass production.  All signs point to important growth.

The Memory Guy is pleased to announce that Objective Analysis and Coughlin Associates have joined forces to update our study of the emerging memory market in a new Continue reading “New Report: Emerging Memories Find Their Direction”

NVM Selectors: A Unified Explanation of Threshold Switching

Photo of Ron Neale, Renowned Phase-Change Memory ExpertContributor Ron Neale joins us again to review a paper delivered at last December’s IEDM conference by John Moores & Cambridge Universities, IMEC, and the University of Wuhan.  While the main focus of the paper is on PCM endurance improvements, it also provides some new inputs, which, with some suggested additions of Neale’s own, might now provide a unified explanation of threshold switching in the chalcogenides.  Neale includes discussions of these new ideas with one of the paper’s authors.


One of the most interesting papers at the recent IEDM was presented by a team at: John Moores University Liverpool, and Cambridge University, UK, IMEC, Belgium and the University of Wuhan, China.  As its title makes clear, this research has an important target of Continue reading “NVM Selectors: A Unified Explanation of Threshold Switching”

Chalcogenide Selectors and Oxide Memory Move Towards 1Gbit

Photo of Ron Neale, Renowned Phase-Change Memory ExpertIn this post contributor Ron Neale looks deeper into a paper delivered by CEA-Leti at December’s 2019 IEDM conference, evaluating its fundamental thesis that an OTS selector is suitable for high-density memory arrays.  Another interesting aspect of this same paper was the subject of an earlier post.


One eye catcher at IEDM 2019 was a paper from a team in France at CEA-Leti, Minatec, Grenoble, IMEP LAHC CNRS and INL CNRS, INSA Lyon, by D. Alfaro Robayo et al titled: Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration.  I discussed another aspect of Continue reading “Chalcogenide Selectors and Oxide Memory Move Towards 1Gbit”

Observations on the “Universal Law” for NV Memory Cells

Photo of Ron Neale, Renowned Phase-Change Memory ExpertRon Neale returns to The Memory Guy blog to discuss a “Universal Law” about memory elements and selectors that was presented by CEA Leti at the IEEE’s 2019 IEDM conference last December.


At IEDM 2019 D. Alfaro Robayo et al presented a paper titled: Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration that had a rather interesting claim of a “Universal Law”.  It is possible that some links to the past might help to provide an explanation for Continue reading “Observations on the “Universal Law” for NV Memory Cells”

NV Memory Selectors: Forming the Known Unknowns (Part 5)

Phto of Ron Neale, Renowned Phase-Change Memory ExpertIn this final part of a five-part series, contributor Ron Neale continues his analysis of selector technologies focusing on the nature of the mystery of Forming and a number of the many unanswered questions.


Any search for Forming-Free structures might find some help in the article by Antonin Verdy of Leti titled: Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS Selectors.  This article also Continue reading “NV Memory Selectors: Forming the Known Unknowns (Part 5)”

NV Memory Selectors: Forming the Known Unknowns (Part 4)

Ron NealeIn this fourth part of a five-part series, contributor Ron Neale continues his analysis of selector technologies, focusing on the nature of the mystery of Forming and a number of the many unanswered questions.


From the discussion and investigations outlined in the earlier parts of this series, there would appear to be a number of options to explain selector Forming, where on the first switching event the threshold switching voltage Continue reading “NV Memory Selectors: Forming the Known Unknowns (Part 4)”