This post shares a new and entertaining animation by Charlotte Streeter that offers one interpretation of the inner workings of one type of SiO-based nonvolatile memory like those described in Ron Neale’s most recent post on The Memory Guy.
The video links the observed electrical characteristics to the structural Continue reading “Video: The Inner Workings of SiO ReRAM”
In this post contributor Ron Neale analyzes Weebit Nano’s recently-announced memory array, based on SiO and an Ovonic Threshold Switch selector developed by CEA-Leti in France. Ron employs his extensive background in Ovonic devices to try and sleuth out the characteristics of both the memory element and the selector, and to understand some of the inner workings of the cell.
Weebit-Nano (Hod Hasharon, Israel), have recently reported some first steps on the path they have outlined to meet their bold claim of Continue reading “Weebit-Nano’s First Small Steps on the NV Memory Road”
The Memory Guy is pleased to announced the release of a new report by Objective Analysis and Coughlin Associates: Emerging Memories Take Off.
The report is the 2021 update of our popular 2020 emerging memories report, and includes detailed technology profiles of MRAM, ReRAM, FRAM, PCM/XPoint and other technologies, profiles of Continue reading “New Report: Emerging Memories Take Off”
Contributor Ron Neale joins us again to review a recently-published article in the journal Nature Scientific Reports. While the main focus of the paper is on using a nitrogen environment to generate stable memory selectors from ZnTe, it also provides some new inputs through which he finds further support of his theories of Forming and device behavior.
A recently-published Nature Scientific Reports article by a research team from Hanyang and Kunsan Universities in The Republic of Korea focuses on Continue reading “ZnTe Selectors to Solve NVM Fabrication Problems”
The Memory Guy is pleased to announce the release of a new report co-authored by Objective Analysis and Coughlin Associates named: Emerging Memories Find Their Direction. In this report we show that emerging memories, MRAM, ReRAM, 3D XPoint, and other technologies are well on their way to reach $36 billion of combined revenues by 2030.
The report provides invaluable guidance to Continue reading “Emerging Memory Market to Hit $36 Billion by 2030”
This year emerging memories are getting a taste of the healthy market that lies ahead. Stand-alone MRAM is being accepted in a broader range of applications, 3D XPoint memory is finally shipping in DIMMs, and embedded MRAM has moved from prototypes into mass production. All signs point to important growth.
The Memory Guy is pleased to announce that Objective Analysis and Coughlin Associates have joined forces to update our study of the emerging memory market in a new Continue reading “New Report: Emerging Memories Find Their Direction”
Ron Neale returns to The Memory Guy blog to discuss a “Universal Law” about memory elements and selectors that was presented by CEA Leti at the IEEE’s 2019 IEDM conference last December.
At IEDM 2019 D. Alfaro Robayo et al presented a paper titled: Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration that had a rather interesting claim of a “Universal Law”. It is possible that some links to the past might help to provide an explanation for Continue reading “Observations on the “Universal Law” for NV Memory Cells”
In this fourth part of a five-part series, contributor Ron Neale continues his analysis of selector technologies, focusing on the nature of the mystery of Forming and a number of the many unanswered questions.
From the discussion and investigations outlined in the earlier parts of this series, there would appear to be a number of options to explain selector Forming, where on the first switching event the threshold switching voltage Continue reading “NV Memory Selectors: Forming the Known Unknowns (Part 4)”
Almost one year ago Tom Coughlin and The Memory Guy presented the findings of our first emerging memories report at the Storage Networking Industry Association’s (SNIA) Storage Developers Conference (SDC). The podcast of this presentation has just been made available on the SNIA website.
In the podcast, titled “The Long and Winding Road to Persistent Memories,” Tom and I reviewed leading emerging memory technologies as we had surveyed them for our report.
This is a highly visual presentation, so I would recommend following along with the slides, which can also be downloaded from the SNIA SDC website at HERE. That same page combines the slides and the podcast into a video, so if you’re able to, it might be a good idea to watch the video. If you’re driving as your listening to it, though, then please use the podcast instead!
In the time since that podcast was recorded Tom and I have updated the report to a 2019 edition, which can be Continue reading “Podcast: Storage Developer Conference 2018 – Emerging Memories”
In this second part of a five-part series contributor Ron Neale continues his analysis of selector technologies focusing the nature of the mystery of Forming and a number of the many unanswered questions.
Thin film selectors, or memory matrix isolation devices, based on chalcogenide glasses, would appear to be the devices of choice as non-volatile memory arrays move towards 3D stacked structures. Considerable progress has been made in finding selector compositions which can be doped to provide a suitable level of structural stability required for the NV memory array application. These were discussed in the first part of this series.
However, there is one known unknown in relation to this type of selector and it is the need for Forming, with the unknown being the physical nature of the changes which occur within the device as a result of the Forming process and any implications those changes might have on reliability and performance. The outward manifestation of Forming is a change in threshold voltage from an initial value to some lower more constant operating value. Not just a minor threshold voltage change but a significant one, a reduction of the order 36% in some cases.
The diagram below illustrates Continue reading “NV Stacked Memory Selectors: Forming the Known Unknowns (Part 2)”