Now that Intel is exiting the Optane market what will happen to the market for new memory technologies? This is an interesting question that The Memory Guy has focused considerable attention over the past few years. In a nutshell, the market will continue to develop, but at a slower pace, with the bulk of revenue growth going to memories embedded into SoCs.
Even so, the market will grow significantly, with revenues reaching Continue reading “Emerging Memories After Optane”
In his latest post on The Memory Guy, contributor Ron Neale reviews a novel use for ReRAM cells in which a neural processing system mimics the direction-finding mechanism of a barn owl’s ears. This is based on research performed by CEA-Leti in France, which was recently published in the journal Nature.
The potential for the use of the unique characteristics of ReRAMs, PCM and CeRAMs as brain-gates, neuromorphic devices, and in-memory computation has long been recognised.
In a paper recently published in Nature , inspired by the auditory system of the barn owl, a team from: CEA-Leti, Continue reading “ReRAMs find a Neuromorphic Role in Owl-Inspired Object Location”
This post shares a new and entertaining animation by Charlotte Streeter that offers one interpretation of the inner workings of one type of SiO-based nonvolatile memory like those described in Ron Neale’s most recent post on The Memory Guy.
The video links the observed electrical characteristics to the structural Continue reading “Video: The Inner Workings of SiO ReRAM”
In this post contributor Ron Neale analyzes Weebit Nano’s recently-announced memory array, based on SiO and an Ovonic Threshold Switch selector developed by CEA-Leti in France. Ron employs his extensive background in Ovonic devices to try and sleuth out the characteristics of both the memory element and the selector, and to understand some of the inner workings of the cell.
Weebit-Nano (Hod Hasharon, Israel), have recently reported some first steps on the path they have outlined to meet their bold claim of Continue reading “Weebit-Nano’s First Small Steps on the NV Memory Road”
The Memory Guy is pleased to announced the release of a new report by Objective Analysis and Coughlin Associates: Emerging Memories Take Off.
The report is the 2021 update of our popular 2020 emerging memories report, and includes detailed technology profiles of MRAM, ReRAM, FRAM, PCM/XPoint and other technologies, profiles of Continue reading “New Report: Emerging Memories Take Off”
Contributor Ron Neale joins us again to review a recently-published article in the journal Nature Scientific Reports. While the main focus of the paper is on using a nitrogen environment to generate stable memory selectors from ZnTe, it also provides some new inputs through which he finds further support of his theories of Forming and device behavior.
A recently-published Nature Scientific Reports article by a research team from Hanyang and Kunsan Universities in The Republic of Korea focuses on Continue reading “ZnTe Selectors to Solve NVM Fabrication Problems”
The Memory Guy is pleased to announce the release of a new report co-authored by Objective Analysis and Coughlin Associates named: Emerging Memories Find Their Direction. In this report we show that emerging memories, MRAM, ReRAM, 3D XPoint, and other technologies are well on their way to reach $36 billion of combined revenues by 2030.
The report provides invaluable guidance to Continue reading “Emerging Memory Market to Hit $36 Billion by 2030”
This year emerging memories are getting a taste of the healthy market that lies ahead. Stand-alone MRAM is being accepted in a broader range of applications, 3D XPoint memory is finally shipping in DIMMs, and embedded MRAM has moved from prototypes into mass production. All signs point to important growth.
The Memory Guy is pleased to announce that Objective Analysis and Coughlin Associates have joined forces to update our study of the emerging memory market in a new Continue reading “New Report: Emerging Memories Find Their Direction”
Ron Neale returns to The Memory Guy blog to discuss a “Universal Law” about memory elements and selectors that was presented by CEA Leti at the IEEE’s 2019 IEDM conference last December.
At IEDM 2019 D. Alfaro Robayo et al presented a paper titled: Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration that had a rather interesting claim of a “Universal Law”. It is possible that some links to the past might help to provide an explanation for Continue reading “Observations on the “Universal Law” for NV Memory Cells”
In this fourth part of a five-part series, contributor Ron Neale continues his analysis of selector technologies, focusing on the nature of the mystery of Forming and a number of the many unanswered questions.
From the discussion and investigations outlined in the earlier parts of this series, there would appear to be a number of options to explain selector Forming, where on the first switching event the threshold switching voltage Continue reading “NV Memory Selectors: Forming the Known Unknowns (Part 4)”
