An article in a recent issue of Business Korea posits that Apple may be having trouble stemming from the company’s adoption of TLC flash in it’s new iPhone 6.
The article states:
considering that technical defects mainly occur in the 128GB version of the iPhone 6 Plus, there might be a problem in the controller IC of triple-level cell (TLC) NAND flash.
The problem has led to numerous warranty replacements and the looming prospects of a recall.
(Note that Continue reading “Is Apple Losing Dollars to Save a Few Cents?”
Samsung has finally introduced the 3-bit 3D NAND chip it revealed at last August’s Flash Memory Summit. This announcement was made in the form of an SSD announcement.
For those who were unable to attend the Flash Memory Summit, Samsung’s Senior VP of Memory R&D, Bob Brennan, announced in his keynote speech that a 3D 32-layer V-NAND, a chip that would achieve twice the chip density of planar NAND, was entering production and that SSDs would follow in a month. Now, two months later, Samsung has announced those SSDs.
This week’s release reiterates Continue reading “Finally! Samsung’s 3-Bit V-NAND Arrives”
One memory chip was so important that it was presented three times at this week’s International Solid State Circuits Conference (ISSCC) and that was the Toshiba/SanDisk 128Gb NAND flash. This chip was shown by Eli Harari in Monday’s keynote, then was featured twice in the Wednesday afternoon Nonvolatile Memories session – once by Toshiba and once by SanDisk.
The NAND chip, measuring 170.6mm², is said by both companies to be the densest NAND available. Compared to the Intel/Micron 64Gb 20nm NAND at 118mm², the device gives twice the bits in a 45% larger die area, so the companies’ claim rings true, since the only other NAND makers: Samsung and Hynix, have processes that fall far behind at 27nm and 26nm respectively.
Continue reading “Inside SanDisk’s & Toshiba’s New 128Gb NAND Chip”