Backing Out DRAM Process Rules

Inotera HQInotera recently announced earnings and posted an impressive 55% gross margin.  Inotera is a pure-play DRAM maker, so it’s not too difficult to estimate the company’s process geometries based on its financials.

The Memory Guy thought it might be interesting to determine what I could from the 55% gross margin number.

First of all we can estimate Inotera’s manufacturing cost/GB based on the gross margin and an assumption about the company’s sales price/GB.  The WSTS price per gigabyte for November was $7.83.   Assuming that Inotera’s ASP was equal to this number, then at a gross margin of 55% the company’s cost/GB would have been $3.52.

Inotera’s acts as a foundry for Micron Technoogy.  If Inotera sold to Micron at some lower price, then Inotera’s production costs would necessarily be proportionally lower to maintain the same gross margin.

Using the WSTS price: At a processed wafer cost of $1,600 (my rule of thumb) a $3.52/GB cost would require 454 8Gb dice to be produced Continue reading “Backing Out DRAM Process Rules”

SanDisk & Toshiba Move to Next Process Node

SanDisk's explanation of old vs new 19nm processesSanDisk and Toshiba, in separate announcements, both today disclosed their next-generation process technology.

The companies introduced their new “1y” processing node that, according to SanDisk, produces 19nm x 19.5nm cell, versus the earlier “19nm” process (or “1x”) that used a 19nm x 26nm cell.

The graphic for this post (click to enlarge) was presented during SanDisk’s May 5th Analyst Day and compares the 24nm process to the 19 x 26nm process, moving to the 19 x 19nm process, and eventually to “1z” which neither company is yet revealing.  After the 1z process SanDisk believes Continue reading “SanDisk & Toshiba Move to Next Process Node”