In August 2013 Samsung announced its V-NAND, the first production 3D NAND, kicking off a big change in the way that NAND flash will be manufactured. This new technology raises a number of important questions:
- What exactly is a 3D NAND?
- Why does the industry need to go to a 3D topology?
- How the heck do they make such a product?
To answer these questions I assembled a series of articles posted as weekly segments on The Memory Guy blog during the fourth quarter of 2013. The different sections are listed below, with hot links to each section.
- Why Do We Need 3D NAND?
- What Is a 3D NAND?
- Making a Vertical NAND String
- An Alternative Kind of Vertical 3D NAND String
- How Do You Access the Control Gates?
- Benefits of Charge Traps over Floating Gates
- How Do You Erase and Program 3D NAND?
- 3D NAND’s Impact on the Equipment Market
- Who Will Make It and When?
Each of these is a topic that is complex enough to warrant its own post, so for the nine Fridays I published a post to explain each one in depth. I hope you find it engaging and informative.