Chalcogenide Selectors and Oxide Memory Move Towards 1Gbit

Photo of Ron Neale, Renowned Phase-Change Memory ExpertIn this post contributor Ron Neale looks deeper into a paper delivered by CEA-Leti at December’s 2019 IEDM conference, evaluating its fundamental thesis that an OTS selector is suitable for high-density memory arrays.  Another interesting aspect of this same paper was the subject of an earlier post.


One eye catcher at IEDM 2019 was a paper from a team in France at CEA-Leti, Minatec, Grenoble, IMEP LAHC CNRS and INL CNRS, INSA Lyon, by D. Alfaro Robayo et al titled: Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration.  I discussed another aspect of Continue reading “Chalcogenide Selectors and Oxide Memory Move Towards 1Gbit”

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