NAND flash is the process leader in memory technology, and this puts it in a very challenging position: It must ramp to high volume production using techniques that have never been tried before.
The graphic for this post (click to enlarge), supplied by ASML, the semiconductor industry’s leading lithography tool supplier, illustrates the challenge of migrating from one process node to the next. Across the bottom, on the X-axis, are representative process nodes ranging from “2D-45”, or two-dimensional (planar) 45nm NAND, to “3D-5x”, or three-dimensional 5xnm NAND. Below these numbers are the year of volume production.
The vertical axis, labeled “Tolerance” represents the minimum Continue reading “Why NAND is So Difficult to Scale”
A very unusual side effect of the move to 3D NAND will be the impact on the equipment market. 3D NAND takes the pressure off of lithographic steps and focuses more attention on deposition and etch. The reason for going to 3D is that it provides a path to higher density memories without requiring lithographic shrinks.
This sounds like bad news for stepper makers like ASML, Canon, and Nikon while it should be a boon to deposition and etch equipment makers like Applied Materials, Tokyo Electron, and Lam Research.
In its summer 2013 V-NAND announcement, Samsung explained that it would be Continue reading “3D NAND’s Impact on the Equipment Market”