One memory chip was so important that it was presented three times at this week’s International Solid State Circuits Conference (ISSCC) and that was the Toshiba/SanDisk 128Gb NAND flash. This chip was shown by Eli Harari in Monday’s keynote, then was featured twice in the Wednesday afternoon Nonvolatile Memories session – once by Toshiba and once by SanDisk.
The NAND chip, measuring 170.6mm², is said by both companies to be the densest NAND available. Compared to the Intel/Micron 64Gb 20nm NAND at 118mm², the device gives twice the bits in a 45% larger die area, so the companies’ claim rings true, since the only other NAND makers: Samsung and Hynix, have processes that fall far behind at 27nm and 26nm respectively.
Continue reading “Inside SanDisk’s & Toshiba’s New 128Gb NAND Chip”
