3D NAND: Who Will Make It and When?

SK hynix 3D NAND Cross Section(The following is an update of a post that originally ran on 13 December 2013.  It was republished in 2024 as a part of a series on The Memory Guy blog to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)


This series, originally run in 2013, has looked at 3D NAND technology in a good deal of technical depth.  At that time, the last question to be answered centered around the players and the timing that the technology would Continue reading “3D NAND: Who Will Make It and When?”

How Do You Erase and Program 3D NAND?

How FN Tunneling Works. Cross section of a floating gate transistor. A word balloon on the control gate says "Strong Positive Potential", and word balloons on the source and drain say "Strong Negative Potential." Arrows show how the current would travel from the source and drain through the tunnel oxide to leave electrons on the floating gate, indicated by little circles, as the current tried to reach the control gate.

(The following is an update of a post that originally ran on 29 November 2013.  It was republished in 2024 as a part of a series to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)


Some of my readers have asked: “How is 3D NAND Continue reading “How Do You Erase and Program 3D NAND?”

3D NAND: Making a Vertical String

Toshiba's Original BiCS Diagram - IEDM 2007(The following is an update of a post that originally ran on 1 November 2013.  It was republished in 2024 as a part of a series to honor the 3D NAND inventors who have received the 2024 FMS Lifetime Achievement Award.)


Let’s look at how one form of 3D NAND is manufactured.  For this post we will explore Continue reading “3D NAND: Making a Vertical String”

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