I was recently directed to a very interesting blog post written by 3D technologist Andrew Walker of Schiltron in which he compares two NAND flash chips that were presented at the IEEE International Solid State Circuits Conference (ISSCC) on February 12.
The post, titled Samsung’s V-NAND Flash at the 2014 ISSCC: Ye Distant Spires… is on the 3D InCites website.
Dr. Walker puts a lot more time and effort into his graphic representations of 3D NAND chips than do others (The Memory Guy included) and this makes it much easier to understand the issues he points out. He shows us that Samsung’s 3D NAND cell is about 5 times the size of a 40nm planar NAND cell and about 30 times that of Micron’s 16nm planar cell, and that the 3D NAND’s physical area is unlikely to change with any future 3D technology generations.
For this and other reasons (given in the article) he states that the Samsung V-NAND is “an impressive achievement but not a realistic foundation for the future.”
After having compiled my series on 3D NAND I can appreciate Dr. Walker’s opinion. This is certainly going to be a difficult technology to master, and it could be quite some time before the cost structure for 3D NAND can compete against that of today’s planar technologies.
Give the Walker post a quick read and judge for yourself whether we are at the brink of a 3D conversion or if this technology can be expected to slip out a few years.
This series has looked at 3D NAND technology in a good deal of technical depth. The last question to be answered centers around the players and the timing of the technology. A lot has been said about the technology and its necessity. Will everyone be making 3D NAND? When will this big transition occur?
This post will provide an update as of its publication (13 December 2013) to show each company’s current status, to the best of The Memory Guy’s understanding. Readers may want to refer back to the earlier posts in this series, as well as to a June 2013 Nikkei TechON article that gives a good review of the 3D NAND alternatives that have been presented at various technical conferences.
Let’s start with Samsung, the largest producer of NAND flash today. Just prior to Memcon 2013 last Continue reading “3D NAND: Who Will Make It and When?”
A very unusual side effect of the move to 3D NAND will be the impact on the equipment market. 3D NAND takes the pressure off of lithographic steps and focuses more attention on deposition and etch. The reason for going to 3D is that it provides a path to higher density memories without requiring lithographic shrinks.
This sounds like bad news for stepper makers like ASML, Canon, and Nikon while it should be a boon to deposition and etch equipment makers like Applied Materials, Tokyo Electron, and Lam Research.
In its summer 2013 V-NAND announcement, Samsung explained that it would be Continue reading “3D NAND’s Impact on the Equipment Market”
One of the thornier problems in making 3D NAND is the job of connecting the peripheral logic (the row decoders) to all of those control gates that are on layers buried somewhere within the bit array. Remember that the control gates are the conductive sheets of polysilicon or tantalum nitride at various depths in the chip.
The problem boils down to this: You can’t run connections from each layer up or down the side of the chip to get to the CMOS circuits below. Instead you have to create a terrace structure to expose and connect to each layer.
These connections are made by etching a stair-step pattern into the layers and sinking Continue reading “3D NAND: How do You Access the Control Gates?”
My prior 3D NAND post explained how Toshiba’s BiCS cell works, using a silicon nitride charge trap to substitute for a floating gate. This post will look at an alternative technology used by Samsung and Hynix which is illustrated in the first graphic, a diagram Samsung presented at a technical conference. This cell also uses a charge trap.
Let The Memory Guy warn you, if the process in my prior post seemed tricky, this one promises to put that one to shame!
Part of this stems from the use of a different kind of NAND bit cell. You can shrink flash cells smaller if you use a high-k gate dielectric (one with a high dielectric constant “k”) since it Continue reading “An Alternative Kind of Vertical 3D NAND String”
Let’s look at how one form of 3D NAND is manufactured. For this post we will explore the original design suggested by Toshiba at the IEEE’s International Electron Device Meeting (IEDM) in 2007. It’s shown in the first graphic of this post. (Click on any of the graphics for a better view.)
Toshiba calls this technology “BiCS” for “Bit Cost Scaling.” The technique doesn’t scale the process the way the world of semiconductors has always done to date – it scales the cost without shrinking the length and width of the memory cell. It accomplishes this by going vertically, as is shown in this post’s first graphic.
This takes a special effort. This is where the real Continue reading “3D NAND: Making a Vertical String”
In the prior post we discussed the need to go vertically into the body of the die, since NAND flash can not be scaled much farther in length and width on the die’s surface. Toshiba invented a 3D NAND which has been adopted and refined by all flash makers. The idea is simple: Rather than shrink the cell’s length and width, why not turn the NAND string so that it’s standing on its end?
This concept is illustrated by this post’s first graphic, which was provided by Applied Materials. (Click on the graphic to see the whole thing at a larger size.) A standard NAND string that normally runs longitudinally is turned on its end to become a vertical string. Not only that, but it makes things easier if the string is split into two sections and Continue reading “What is a 3D NAND?”
A memory chip of a certain area costs about the same amount to produce, no matter how many bits it holds. Naturally, the more bits you can cram onto this chip, the cheaper the price per bit will be. Low cost is of the utmost importance in the world of memory.
Memory chip makers have shrunk the cost of a bit some nine orders of magnitude since the 1960s largely by shrinking the process, or “scaling” to increasingly tighter process geometries.
Flash has always been expected to reach a scaling limit. Over the past few generations technologists have developed Continue reading “Why Do We Need 3D NAND?”
At the Flash Memory Summit yesterday ES Jung, PhD, EVP & GM for the Samsung R&D Center, explained the inner workings of Samsung’s new V-NAND vertical NAND flash technology. I will shortly be writing a series to explain what a 3D NAND is since there is little on the web that gives clear details about the technology.
One key attribute of most 3D NAND approaches is the use of a charge trapping layer. This has to do with the difficulty of manufacturing sideways floating gates.
Dr Jung delighted the show’s audience by explaining that a standard floating gate is like Continue reading “Samsung’s View on Charge Trap Flash”
Samsung has announced production of its 3D NAND technology. This approach, first introduced by Toshiba in 2007, allows NAND flash makers to achieve more bits per chip by building NAND strings, which normally run across the surface of the chip, as vertical stacks.
It’s a fascinating technology, since it harnesses exotic steps invented by DRAM makers in the 1990s to get over scaling problems in that technology. At the time DRAM had to go vertical to follow Moore’s Law and there were two schools of vertical DRAM: Stacked Capacitor, and Trench Cell. The stacked capacitor camp layered polysilicon and silicon dioxide into layers to form a vertical capacitor. The trench camp etched a very narrow and deep hole into the silicon and lined it with the capacitor plates. Both worked very well, but over time the trench makers have Continue reading “Samsung Announces 3D NAND Production”