Elpida ReRAM Prototype

How a New Technology Usurps FlashElpida announced the development of a high-speed 64Mb non-volatile resistance memory (ReRAM) prototype using a 50nm process. The device was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution.

Elpida will conduct further ReRAM development with Sharp Corporation, the National Institute of Advanced Industrial Science and Technology (AIST, another Japanese public institution) and the University of Tokyo.

It’s encouraging to see that Elpida still has its eye on projects into 2013 and beyond.  The company is rumored to be working feverishly to find ways to stay in business through this year.  Today’s DRAM market is a challenging one!

Continue reading “Elpida ReRAM Prototype”

WIOMING: Another Spin on the Hybrid Memory Cube

ST-Ericsson & CEA-Leti WIOMING Multichip ModuleAt a Conference in San Francisco today (Tuesday December 13 ) ST-Ericsson and CEA-Leti presented a paper on something the companies called a: “Breakthrough 3DIC with Wide I/O Interface.”

This product appears to be a variation on the Hybrid Memory Cube, or HMC concept detailed in a prior post.

Remember that the HMC stacks a number of DRAM chips atop a logic chip.  The memories store data and communicate to the logic chip through thousands of through-silicon vias (TSVs) while the logic chip handles communications with the outside world. Continue reading “WIOMING: Another Spin on the Hybrid Memory Cube”